Light emitting device and light emitting device package having the same

ABSTRACT

Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.

The present application claims priority under 35 U.S.C. 119 to KoreanPatent Application No. 10-2009-0044290 (filed on May 21, 2009), which ishereby incorporated by reference in its entirety.

BACKGROUND

The embodiment relates to a light emitting device and a light emittingdevice package having the same.

A III-V group nitride semiconductor has been variously used for anoptical device such as blue/green LEDs (light emitting diodes), a highspeed switching device such as a MOSFET (metal semiconductor fieldeffect transistor) and a HEMT (hetero junction field effect transistor),a light source of an illumination or a display apparatus, and the like.

The nitride semiconductor is mainly used for the LED (Light EmittingDiode) or an LD (laser diode), and studies have been continuouslyconducted to improve the manufacturing process or a light efficiency ofthe nitride semiconductor.

SUMMARY

The embodiment provides a light emitting device having a stack structureof a first electrode, an insulating layer, and a second electrode on afirst conductive type semiconductor layer, and a light emitting devicepackage having the same.

The embodiment provides a light emitting device including a stackstructure of a first electrode including an arm shape, an insulatinglayer, a second electrode, and a first electrode layer on the firstconductive type semiconductor layer and a light emitting device packagehaving the same.

The embodiment provides a light emitting device including a stackstructure of a second electrode having an arm shape and a firstelectrode layer on a second conductive type semiconductor layer and alight emitting device package having the same.

The embodiment provides a light emitting device including a firstelectrode layer having a dual structure on a second conductive typesemiconductor layer and a light emitting device package having the same.

The embodiment provides a light emitting device and a light emittingdevice package, in which first and second electrodes are offset fromeach other, or are vertically overlapped with each other.

The embodiment provides a light emitting device and a light emittingdevice package, in which the freedom degree for the first and secondelectrodes can be improved.

According to the embodiment, alight emitting device comprises a lightemitting structure including a first conductive type semiconductorlayer, an active layer on the first conductive type semiconductor layer,and a second conductive type semiconductor layer on the active layer; afirst electrode including at least one arm shape and contacted with aportion of the first conductive type semiconductor layer; an insulatinglayer covering the first electrode; and a second electrode including atleast one arm shape, wherein the second electrode disposes on at leastone of the insulating layer and the second conductive type semiconductorlayer.

According to the embodiment, a light emitting device includes a lightemitting structure including a first conductive type semiconductorlayer, an active layer on the first conductive type semiconductor layer,and a second conductive type semiconductor layer on the active layer; afirst electrode including at least one arm shape embedded in the lightemitting structure and contacted with a portion of the first conductivetype semiconductor layer; an insulating layer covering the firstelectrode; a second electrode including at least one arm shape anddisposed on at least one of the insulating layer and the secondconductive type semiconductor layer; and a first transmittive electrodelayer on the second electrode and the insulating layer.

According to the embodiment, a light emitting device package includes abody, a plurality of lead electrodes disposed on the body, a lightemitting device electrically connected to the lead electrodes, and amolding member covering the light emitting device. The light emittingdevice includes a light emitting structure, which includes a firstconductive type semiconductor layer, an active layer on the firstconductive type semiconductor layer, and a second conductive typesemiconductor layer on the active layer; a first electrode including atleast one arm shape and contacted with a portion of the first conductivetype semiconductor layer; an insulating layer covering the firstelectrode; and a second electrode including at least one arm shape,wherein the second electrode disposes on at least one of the insulatinglayer and the second conductive type semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a light emitting device accordingto a first embodiment;

FIG. 2 is a sectional view taken along line A-A of FIG. 1;

FIG. 3 is a side sectional view of line B-B of FIG. 1;

FIGS. 4 to 12 are view showing the manufacturing process of the lightemitting device according to the first embodiment;

FIG. 13 is a side sectional view showing a light emitting deviceaccording to a second embodiment;

FIG. 14 is a side sectional view showing a light emitting deviceaccording to a third embodiment;

FIG. 15 is a side sectional view showing a light emitting deviceaccording to a fourth embodiment;

FIGS. 16A to 16F are views showing a light emitting device according toa fifth embodiment;

FIGS. 17A to 17F are views showing a light emitting device according toa sixth embodiment;

FIGS. 18A to 18F are views showing a light emitting device according toa seventh embodiment;

FIGS. 19 to 22 are side sectional views showing a process of forming afirst electrode according to an eighth embodiment;

FIGS. 23 to 26 are side sectional views showing a process of forming afirst electrode according to a ninth embodiment;

FIGS. 27 to 30 are side sectional views showing a process of forming afirst electrode according to a tenth embodiment;

FIGS. 31 to 34 are views showing examples of electrode patternsaccording to the embodiment;

FIG. 35 is a side sectional view showing a light emitting device packageaccording to the embodiment;

FIG. 36 is a view showing an illumination unit according to theembodiment; and

FIG. 37 is a view showing a backlight unit according to the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, the embodiment will be described with reference toaccompanying drawings.

In the description of the embodiments, it will be understood that, whena layer (or film), a region, a pattern, or a structure is referred to asbeing “on” or “under” another substrate, another layer (or film),another region, another pad, or another pattern, it can be “directly” or“indirectly” on the other substrate, layer (or film), region, pad, orpattern, or one or more intervening layers may also be present. Such aposition of the layer has been described with reference to the drawings.

FIG. 1 is a perspective view showing a light emitting device accordingto a first embodiment, FIG. 2 is a sectional view taken along line A-Aof FIG. 1, and FIG. 3 is a side sectional view of line B-B of FIG. 1.

Referring to FIG. 1, a light emitting device 100 includes a substrate111, a first conductive type semiconductor layer 113, an active layer115, a second conductive type semiconductor layer 117, a first electrode120, a first pad 128, an insulating layer 130, a second electrode 150, afirst electrode layer 140, a second pad 158, and a second electrodelayer 140A.

The substrate 111 may include at least one of Al₂O₃, SiC, Si, GaAs, GaN,ZnO, GaP, InP, and Ge. The substrate 111, and may serve as a conductivesubstrate. A concave-convex pattern may be formed on and/or under thesubstrate 111. The concave-convex pattern may include one of a stripeshape, a lens shape, a column shape, and a conical shape.

A buffer layer and/or an undoped semiconductor layer may be formed onthe substrate 111. The buffer layer may reduce lattice mismatchingbetween a GaN material and a substrate material, and may include atleast one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. The undopedsemiconductor layer may be formed on the substrate 111 or the bufferlayer, and may include an undoped GaN-based material. The buffer layerand/or the undoped semiconductor layer may include various materials andmay be formed in various ways.

The first conductive type semiconductor layer 113 is formed on thesubstrate 111, and the first conductive type semiconductor layer 113includes at least one semiconductor layer doped with first conductivedopants, and includes a first electrode contact layer. When the firstconductive type semiconductor layer 113 is a N-type semiconductor layer,the first conductive type semiconductor layer 113 may includes at leastone of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs,GaAsP, or AlGaInP. The first conductive type semiconductor layer 113 mayinclude a single layer or multiple layers. When the first conductivedopant is an N-type dopant, the first conductive type semiconductorlayer 113 may include Si, Ge, Sn, Se, or Te.

The active layer 115 is formed on the first conductive typesemiconductor layer 113. The active layer 115 may include III-V groupcompound semiconductors. The active layer 115 may include at least oneof a signal quantum well structure, a multiple quantum well structure, aquantum wire structure, or a quantum dot structure. A well layer/barrierlayer of the active layer 115 may include a pair structure of InGaN/GaN,GaN/AlGaN, or InGaN/InGaN, but the embodiment is not limited thereto.The well layer may include a material having a band gap lower than thatof the barrier layer.

A first conductive clad layer may be provided below the active layer115. The first conductive clad layer may include an AlGa-basedsemiconductor, and has a band gap higher that that of the active layer115.

The active layer 115 is made from material having band gap energyaccording to wavelength of light to be emitted. For instance, in thecase of blue light having wavelength of 460 to 470 nm, the active layer115 has a single quantum well structure or a multiple quantum wellstructure including the InGaN well/GaN barrier layers. The active layer115 may selectively include material capable of providing light ofvisible ray band, such as blue light, red light and green light, and thematerial can be changed within the technical scope of the embodiment.

A first conductive clad layer may be formed between the first conductivetype semiconductor layer 113 and the active layer 115. If the firstconductive clad layer is an N-type semiconductor layer, the firstconductive clad layer may include an N-type AlGaN layer, but theembodiment is not limited thereto. The first conductive clad layer has aband gap higher than that of the active layer 115.

The second conductive type semiconductor layer 117 includes at least onesemiconductor layer doped with a second conductive dopant, and includesa second contact layer. When the second conductive type semiconductorlayer 117 is a P-type semiconductor layer, the second conductive typesemiconductor layer 117 may include at least one of GaN, InN, AlN,InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. Thesecond conductive type semiconductor layer 117 may include a singlelayer or multiple layers. When the second conductive dopant is a P-typedopant, the second conductive type semiconductor layer 117 may includeat least one of Mg, Zn, Ca, Sr, or Ba.

A third conductive type semiconductor layer (not shown) may be formed onthe second conductive type semiconductor layer 117. The third conductivetype semiconductor layer may include a semiconductor layer having apolarity opposite to that of the second conductive type. For example,the third conductive type semiconductor layer may include at least oneof GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs,GaAsP, or AlGaInP. The third conductive type semiconductor layer mayinclude a single layer or multiple layers. When the third conductivetype semiconductor layer is an N-type semiconductor layer, the thirdconductive type semiconductor layer may include at least one of GaN,InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. When the first conductivedopant is an N-type dopant, the third conductive type semiconductorlayer may include Si, Ge, Sn, Se, or Te.

A light emitting structure 112 includes the first conductive typesemiconductor layer 113, the active layer 115, and the second conductivetype semiconductor layer 117. The light emitting structure 112 mayfurther include the third conductive type semiconductor layer, which hasa polarity opposite to that of the second conductive type, formed on thesecond conductive type semiconductor layer 117. In addition, the firstconductive type semiconductor layer 113 may include a P-typesemiconductor layer, and the second conductive type semiconductor layer117 may include an N-type semiconductor layer. The light emittingstructure 112 may include one of an N-P junction structure, a P-Njunction structure, an N-P-N junction structure, and a P-N-P junctionstructure. Hereinafter, a case in which the second conductive typesemiconductor layer 117 is provided at the uppermost layer of the lightemitting structure 112 will be described.

The first electrode 120 is formed on the first conductive typesemiconductor layer 113, and the insulating layer 130 is formed on thefirst electrode 120. An opening 134 is formed at a portion of theinsulating layer 130. In the opening 134, the first electrode 120 isexposed, and the first pad 128 may be formed. The first pad 128 may notbe formed. In this case, the first electrode serves as the first pad.

The first electrode 120 and the first pad 128 may include at least onelayer including at least one mixture or a plurality of mixture materialsof Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W or Au, butthe embodiment is not limited to the materials.

The first electrode 120 may include at least one of a straight-linepattern, a curved pattern, a mixture pattern of the straight-linepattern and the curved pattern, plural patterns branching from onepattern, a polygonal shape pattern, a lattice shape pattern, a dot shapepattern, a diamond shape pattern, a parallelogram shape pattern, a meshshape pattern, a stripe shape pattern, a cross shape pattern, astar-shape pattern, a circular shape pattern, or a mixture patternthereof, but the embodiment is not limited thereto. The first electrode120 having the pattern can supply uniform power to the first conductivetype semiconductor layer 113, thereby preventing current from beingconcentrated on one place.

The first pad 128 is formed on a portion of the first electrode 120. Onefirst pad or a plurality of pads may be provided.

The first pad 128 may be provided at a position to smoothly transferpower to the first electrode 120. For example, the first pad 128 may beprovided at a central portion or an edge portion of the first electrode120. The active layer 115 and the second conductive type semiconductorlayer 117 may not be formed on the first electrode 120.

The insulating layer 130 is formed at a peripheral portion of the firstelectrode 120, and prevents the first electrode 120 from making contactwith another semiconductor layer such as the active layer 115 or thesecond conductive type semiconductor layer 117. The first electrode 120is embedded in the light emitting structure 112. In addition, the firstelectrode 120 and the insulating layer 130 are embedded in the lightemitting structure 112.

The first pad 128 may be formed on the first electrode 120. Theinsulating layer 130 may include SiO₂, Si₃N₄, Al₂O₃, or TiO₂, but theembodiment is not limited thereto.

The second electrode layer 140A is formed on the second conductive typesemiconductor layer 117 or the third conductive type semiconductorlayer. The second electrode 150 is formed on the second electrode layer140A and the insulating layer 130. The first electrode layer 140 isformed on the second electrode 150, the second conductive typesemiconductor layer 117, and the insulating layer 130.

The first electrode layer 140 is vertically overlapped with the firstelectrode 120 on the insulating layer 130. The second electrode 150 isvertically overlapped with the first electrode 120 on the insulatinglayer 130. The insulating layer 130, the second electrode 150, and aportion of the second electrode layer 140A are vertically overlappedwith each other on the first electrode 120.

The second electrode layer 140A may be locally formed between the secondelectrode 150 and the second conductive type semiconductor layer 117 ormay be formed on the entire top surface of the second conductive typesemiconductor layer 117.

The second electrode layer 140A may contacts with the second conductivetype semiconductor layer 117 to enhance the adhesive strength with thesecond conductive type semiconductor layer 117 and improve conductivitywith the second conductive type semiconductor layer 117. When the secondelectrode layer 140A is formed on the entire top surface of the secondconductive type semiconductor layer 117, the second electrode layer 140Acan diffuse current with the first electrode layer 140.

The second electrode layer 140A and the first electrode layer 140 mayinclude a transmittive electrode material and/or a reflective electrodematerial. The electrode material may include at least one of atransmittive electrode layer, a reflective electrode layer, and anelectrode structure. The transmittive electrode layer may include aninsulating material or a conductive material selectively including onean oxide and a nitride. The transmittive electrode layer may include atleast one of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO Nitride(IZON), ZnO, IrOx, RuOx, NiO, TiOx, and SnO₂, but the embodiment is notlimited thereto. The first electrode layer 140 is provided in the formof a thin film including metal such as Au or Al so that light can betransmitted. The reflective electrode material forms a reflectiveelectrode layer, and may include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt,Au, Hf, or the combination thereof.

At least one of the second electrode layer 140A and the first electrodelayer 140 may include a reflective layer including Al, Ag, Pd, Rh, orPt. In this case, when a chip is mounted through a flip scheme,reflective efficiency can be improved.

A portion of the second electrode 150 has an arm shape or a branchstructure, and is formed on the second electrode layer 140A and theinsulating layer 130. The second electrode 150 may be connected with thesecond conductive type semiconductor layer 117 through the secondelectrode layer 140A.

The second electrode 150 may include at least one of a straight-linepattern, a curved pattern, a mixture pattern of the straight-linepattern and the curved pattern, plural patterns branching from onepattern, a polygonal shape pattern, a lattice shape pattern, a dot shapepattern, a diamond shape pattern, a parallelogram shape pattern, a meshshape pattern, a stripe shape pattern, a cross shape pattern, astar-shape pattern, a circular shape pattern, and a mixture patternthereof, but the embodiment is not limited thereto. The second electrode150 having the pattern can supply uniform power to the second conductivetype semiconductor layer 117 through the second electrode layer 140A andthe first electrode layer 140, thereby preventing current from beingconcentrated on one place.

The second electrode layer 140A is formed on the second conductive typesemiconductor layer 117, and a portion of the first electrode layer 140can directly make contact with the top surface of the second electrodelayer 140A. The first electrode layer 140 and the second electrode layer140A may have a dual current diffusion structure.

Since the first electrode layer 140 may occupy the most part of the topsurface of a chip, current diffusion can be improved.

The first pad 128 may be formed on the first electrode 120 through theopening 134 of the first electrode layer 140. The second pad 158 may beformed on the second electrode 150, and a portion of the second pad 158is formed on the first electrode layer 140, and is vertically overlappedwith the second electrode 150.

One second pad 158 or a plurality of pads 158 may be provided. Thesecond pad 158 and the second electrode 150 may include at least onelayer including at least one of Ag, Ag alloy, Ni, Al, Al alloy, Rh, Pd,Ir, Ru, Mg, Zn, Pt, Au, and Hf or the mixture thereof, but theembodiment is not limited thereto.

According to the second embodiment, the first electrode layer 140 isprovided on the second electrode 150, thereby preventing the secondelectrode 150 from being peeled. In addition, a stack structure of thefirst electrode 120/the insulating layer 130/the second electrode150/the first electrode layer 140 is provided, so that the firstelectrode 120 and a portion of the second electrode 150 can bevertically overlapped with each other. The light emitting device 100prevents a light emitting area from being reduced, thereby improvingexternal quantum efficiency.

As shown in FIGS. 2 and 3, current can be uniformly diffused andsupplied through the first electrode 120, the second electrode 150, thesecond electrode layer 140A, and the first electrode layer 140, so thatcurrent efficiency can be improved.

FIGS. 4 to 12 are views showing the manufacturing process of the lightemitting device according to the first embodiment.

Referring to FIG. 4, a plurality of compound semiconductor layers may beformed on the substrate 111. The compound semiconductor layers includethe light emitting structure 112. The light emitting structure 112includes the first conductive type semiconductor layer 113, the activelayer 115, and the second conductive type semiconductor layer 117sequentially. The substrate 111 may include at least one of Al₂O₃, SiC,Si, GaAs, GaN, ZnO, GaP, InP, and Ge. A concave-convex structure may beformed on the substrate 111.

A compound semiconductor layer is grown on the substrate 111. Thecompound semiconductor layer may be grown by an electronic beamdepositor, physical vapor deposition (PVD), chemical vapor deposition(CVD), plasma laser deposition (PLD), a dual-type thermal evaporator,sputtering, or metal organic chemical vapor deposition (MOCVD), but theembodiment is not limited thereto. The compound semiconductor layer hasa composition equation of InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

A buffer layer and/or an undoped semiconductor layer may be formed onthe substrate 111. The buffer layer can reduce lattice mismatch betweena GaN material and a substrate material. The buffer layer may include atleast one of II-VI group compound semiconductors such as GaN, InN, AlN,InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. Theundoped semiconductor layer may be formed on the substrate 111 or thebuffer layer, and may include an undoped GaN layer. The undopedsemiconductor layer serves as a substrate on which a nitridesemiconductor is grown.

The first conductive type semiconductor layer 113 is formed on thesubstrate ill, and the first conductive type semiconductor layer 113includes at least one semiconductor layer doped with first conductivedopants, and includes a first electrode contact layer. When the firstconductive type semiconductor layer 113 is a N-type semiconductor layer,the first conductive type semiconductor layer 113 may includes at leastone of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs,GaAsP, or AlGaInP. When the first conductive dopant is an N-type dopant,the first conductive type semiconductor layer 113 may include Si, Ge,Sn, Se, or Te.

The active layer 115 is formed on the first conductive typesemiconductor layer 113. The active layer 115 may include III-V groupcompound semiconductors. The active layer 115 may include at least oneof a signal quantum well structure, a multiple quantum well structure, aquantum wire structure, and a quantum dot structure. A welllayer/barrier layer of the active layer 115 may include a pair structureof InGaN/GaN, GaN/AlGaN, or InGaN/InGaN, but the embodiment is notlimited thereto. The well layer may include a material having a band gaplower than that of the barrier layer.

The first conductive clad layer may be provided below the active layer115. A second conductive clad layer may be provided below the activelayer 115. The first and second conductive clad layers may include aGaN-based semiconductor and have a band gap higher than a band gap ofthe active layer 115.

The active layer 115 may include a material emitting color light such asblue, red, or green light, and the material can be changed within thetechnical scope of the embodiment.

The second conductive type semiconductor layer 117 includes at least onesemiconductor layer doped with second conductive dopants and includes asecond electrode contact layer. When the second conductive typesemiconductor layer 117 is a P-type semiconductor layer, the secondconductive type semiconductor layer 117 may include at least one of GaN,InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, orAlGaInP. When the second conductive dopant is a P-type dopant, thesecond conductive type semiconductor layer 117 may include at least oneof Mg, Zn, Ca, Sr, and Ba.

The third conductive type semiconductor layer (not shown) may be formedon the second conductive type semiconductor layer 117, and may include asemiconductor layer having a polarity opposite to that of the secondconductive type.

The light emitting structure 112 includes the first conductive typesemiconductor layer 113, the active layer 115, and the second conductivetype semiconductor layer 117. The light emitting structure 112 mayfurther include the third conductive type semiconductor layer on thesecond conductive type semiconductor layer 117. In addition, the firstconductive type semiconductor layer 113 may include a P-typesemiconductor layer, and the second conductive type semiconductor layer117 may include an N-type semiconductor layer. The light emittingstructure 112 may include one of an N-P junction structure, a P-Njunction structure, an N-P-N junction structure, and a P-N-P junctionstructure.

Referring to FIGS. 5 and 6, a portion of the first conductive typesemiconductor layer 113 is exposed through an etching process. Theexposed region of the first conductive type semiconductor layer 113serves as a first electrode groove 131, and has a structurecorresponding to the first electrode pattern.

The first electrode 120 is formed on the first conductive typesemiconductor layer 113 exposed in the first electrode groove 131. Thefirst electrode 120 is spaced apart from the active layer 115 and thesecond conductive type semiconductor layer 117. In this case, the firstelectrode 120 may be formed after protecting an outer portion of theactive layer 115 and the second conductive type semiconductor layer 117by using a mask pattern or an insulating layer. The first electrode 120is embedded in the first conductive type semiconductor layer 113, theactive layer 115, and the second conductive type semiconductor layer117.

The first electrode 120 may include at least one layer including atleast one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, Wand Au or the mixture thereof, but the embodiment is not limitedthereto.

The first electrode 120 may include at least one of a straight-linepattern, a curved pattern, a mixture pattern of the straight-linepattern and the curved pattern, plural patterns branching from onepattern, a polygonal shape pattern, a lattice shape pattern, a dot shapepattern, a diamond shape pattern, a parallelogram shape pattern, a meshshape pattern, a stripe shape pattern, a cross shape pattern, astar-shape pattern, a circular shape pattern, and a mixture patternthereof, but the embodiment is not limited thereto. The first electrode120 having the pattern can supply uniform power to the first conductivetype semiconductor layer 113, thereby preventing current from beingconcentrated on one place.

Referring to FIGS. 6 and 7, the insulating layer 130 covers the firstelectrode 120. The insulating layer 130 surrounds the first electrode120, and insulates the first electrode 120 from the active layer 115 andthe second conductive type semiconductor layer 117. The insulating layer130 may include SiO₂, Si₃N₄, Al₂O₃, or TiO₂, but the embodiment is notlimited thereto. The first electrode 120 and the insulating layer 130may be embedded in the light emitting structure 112.

A top surface of the insulating layer 130 may be aligned in a line witha top surface of the second conductive type semiconductor layer 117 ornot, but the embodiment is not limited thereto. A portion of theinsulating layer 130 may extend beyond the second conductive typesemiconductor layer 117.

Referring to FIGS. 8 and 9, the opening 134 maybe formed in theinsulating layer 130. The opening 134 may be formed when the insulatinglayer 130 is formed or after the insulating layer 130 has been formed.

The second electrode 140A is formed on a local region or an entireregion of the second conductive type semiconductor layer 117. The secondelectrode 140A includes a transmittive electrode layer or a reflectiveelectrode layer. The transmittive electrode may include at least one ofITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO), IZON, ZnO, IrOx, RuOx,NiO, TiOx, and SnO₂, but the embodiment is not limited thereto. Thesecond electrode layer 140A is provided in the form of a thin filmincluding metal such as Au or Al so that light can be transmitted. Thereflective material is used to form a reflective electrode layer, andmay include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or theselective combination thereof.

The second electrode layer 140A may include a reflective electrode layerincluding Al, Ag, Pd, Rh, or Pt. When a chip is mounted through a flipscheme, reflective efficiency can be improved.

The second electrode layer 140A may be locally formed at a secondelectrode region on the top surface of the second conductive typesemiconductor layer 117, or may be formed on the entire top surface ofthe second conductive type semiconductor layer 117.

Referring to FIGS. 9 and 10, the second electrode 150 is formed on thesecond electrode layer 140A and the insulating layer 130. The first pad128 may be formed on the first electrode 120. The first pad 128 mayselectively include materials of the first electrode 120, but theembodiment is not limited thereto.

The second electrode 150 may include at least one layer including atleast one of Ag, Ag alloy, Ni, Al, Al alloy, Rh, Pd, Ir, Ru, Mg, Zn, Pt,Au, and Hf or the mixture thereof, but the embodiment is not limitedthereto.

The second electrode layer 140A may directly contacts with the secondconductive type semiconductor layer 117 to improve current flow in theentire portion of the second conductive type semiconductor layer 117.

The first electrode layer 140 is formed on the second electrode 150, theinsulating layer 130, the second conductive type semiconductor layer117, or the second electrode layer 140A. The first electrode layer 140may be formed except for the opening 134 or 148. A portion of theinsulating layer 130 may be exposed through the opening 134. Inaddition, the first electrode 120 and the second electrode 150 may bepartially exposed.

The first electrode layer 140 may selectively include materials of thesecond electrode layer 140A. For example, the first electrode layer 140includes a transmittive electrode material or a reflective electrodematerial. The first electrode layer 140 includes a transmittiveelectrode layer or a reflective electrode layer. The transmittiveelectrode layer may include at least one of ITO, IZO, IZTO, IAZO, IGZO,IGTO, AZO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, TiOx, or SnO₂, but theembodiment is not limited thereto. The first electrode layer 140 isprovided in the form of a thin film including metal such as Au or Al sothat light can be transmitted. The reflective electrode materialincludes a reflective electrode layer, and may include Ag, Ni, Al, Rh,Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or the selective combinationthereof.

Referring to FIGS. 10 and 11, a second pad 158 is formed on the secondelectrode 150 exposed through the opening 148. A portion of the secondpad 158 can extend beyond the first electrode layer 140.

The first pad 128 may be formed before or after the first electrodelayer 140 is formed. The first pad 128 and/or the second pad 158 may notbe formed. The second pad 158 may selectively include the materials ofthe second electrode 158.

FIG. 12 is side sectional view taken along line B-B of FIG. 1.

Referring to FIGS. 11 and 12, in the light emitting device 100, thefirst electrode layer 140 is provided on the second electrode 150,thereby preventing the second electrode 150 from being peeled. The stackstructure of the first electrode 120/ the insulating layer 130/thesecond electrode 150/ the first electrode layer 140 is formed on thefirst conductive type semiconductor layer 113, so that the firstelectrode 120 and a portion of the second electrode 150 can bevertically overlapped with each other. In this case, in the lightemitting device 100, a light emitting area can be improved, and externalquantum efficiency can be improved.

The second electrode 150 may be formed only on the insulating layer 130,and the structure can improve luminous intensity. Current is diffusedthrough the first electrode 120, the second electrode 150, the secondelectrode layer 140A, and the first electrode layer 140 and supplied, sothat current efficiency can be improved.

FIG. 13 is a side sectional view showing a light emitting device 101according to the second embodiment. Hereinafter, the second embodimentwill be described while focusing on the difference between the firstembodiment and the second embodiment in order to avoid redundancy.

Referring to FIG. 13, the light emitting device 101 includes thesubstrate 111, the first conductive type semiconductor layer 113, theactive layer 115, the second conductive type semiconductor layer 117,the first electrode 120, the first pad 128, the insulating layer 130,the second electrode 150, the first electrode layer 140, and the secondpad 158.

The second electrode 150 is formed on the second conductive typesemiconductor layer 117, and the second electrode 150 is provided on thesecond conductive type semiconductor layer 117 and the insulating layer130. The second embodiment has a structure in which the second electrodelayer (see 140A of FIG. 2) is removed from the first embodiment. Thesecond electrode 150 may directly make contact with the secondconductive type semiconductor layer 117 on the second conductive typesemiconductor layer 117.

A portion of the second electrode 150 is formed on the second conductivetype semiconductor layer 117, and other portion of the second electrode150 is provided on the insulating layer 130, so that the peeled area ofthe second electrode 150 can be reduced.

A portion or an entire portion of the second electrode 150 is formed onthe insulating layer 130, and the first electrode layer 140 is formed atthe most area of the top surface of a chip including the top surface ofthe second electrode 150. The first electrode layer 140 may be formed ona portion or the entire portion of the second electrode 150. Themanufacturing process of the second embodiment is identical to that ofthe first embodiment except for a process of forming the secondelectrode layer.

FIG. 14 is a side sectional view showing a light emitting device 102according to the third embodiment. Hereinafter, the third embodimentwill be described while focusing on the difference between the firstembodiment and the third embodiment in order to avoid redundancy.

Referring to FIG. 14, the light emitting device 102 includes thesubstrate 111, the first conductive type semiconductor layer 113, theactive layer 115, the second conductive type semiconductor layer 117,the first electrode 120, the first pad 128, an insulating layer 130A, asecond electrode 151, a first electrode layer 141, and the second pad158.

The second electrode 151 has an arm shape or a branch structure on theinsulating layer 130A, and is vertically overlapped with a portion ofthe first electrode 120.

The first electrode layer 141 is formed on the second electrode 151, theinsulating layer 130A, and the second conductive type semiconductorlayer 117. In this case, the second electrode 151 may be formed only onthe insulating layer 130A, but the embodiment is not limited thereto.

The second pad 158 is formed in the opening 148 of the first electrodelayer 141, and may directly make contact with the second electrode 151,the first electrode layer 141, and the second conductive typesemiconductor layer 117. In this case, a portion of the first electrodelayer 141 maybe provided between the second pad 158 and the secondconductive type semiconductor layer 117.

The second electrode 151 may be formed only on the insulating layer130A, and the second electrode 151 and the first electrode layer 141 canuniformly diffuse current.

FIG. 15 is a side sectional view showing a light emitting device 103according to the fourth embodiment. Hereinafter, the fourth embodimentwill be described while focusing on the difference between the firstembodiment and the fourth embodiment in order to avoid redundancy.

Referring to FIG. 15, the light emitting device 103 includes thesubstrate 111, the first conductive type semiconductor layer 113, theactive layer 115, the second conductive type semiconductor layer 117,the first electrode 120, the first pad 128, an insulating layer 130A,the second electrode 151, the first electrode layer 141, and the secondpad 158.

A lower surface of the second pad 158 may directly contacts with the topsurface of the second conductive type semiconductor layer 117. Thesecond pad 158 may directly contacts with the second conductive typesemiconductor layer 117 and the second electrode 151.

FIGS. 16A to 16F are plan views showing the manufacturing process of alight emitting device according to a fifth embodiment. Hereinafter, thefourth embodiment will be described while focusing on the differencebetween the first embodiment and the fifth embodiment in order to avoidredundancy.

Referring to FIGS. 16A and 16B, the first conductive type semiconductorlayer 113, the active layer, and the second conductive typesemiconductor layer 117 are formed on a substrate. Then, a firstelectrode groove 131A is formed with a predetermined length D1 through amesa etching process such that the first conductive type semiconductorlayer 113 is exposed.

The first electrode groove 131A may be formed toward the center of achip. The first electrode groove 131A is formed in a line pattern. Thewidth W1 of the first electrode groove 131A is regular or variable, butthe embodiment is not limited thereto.

The first electrode 120 is formed along the first electrode groove 131Aof the first conductive type semiconductor layer 113. The firstelectrode 120 is provided inside the first electrode groove 131A.

Referring to FIGS. 16B to 16D, the insulating layer 130 is formed in thefirst electrode groove 131A to insulate the first electrode 120, and theopening 134 is formed at one side of the insulating layer 130. An upperwidth W2 of the insulating layer 130 may be identical to or differentfrom a width see (W1 of FIG. 16A) of the first electrode groove 131A,but the embodiment is not limited thereto.

The second electrode 150 having a line shape is formed on the insulatinglayer 130. The second electrode 150 is vertically overlapped with thefirst electrode 120 on the insulating layer 130.

Referring to FIGS. 16E to 16F, the first electrode layer 140 is formedon the second electrode 150, the insulating layer 130, and the secondconductive type semiconductor layer 117. The first electrode layer 140may include a transmittive electrode layer or a reflective electrodelayer. A plurality of openings 134 and 148 spaced apart from each otherare formed in the first electrode layer 140

The first and second pads 128 and 158 are formed in the openings 134 and148, respectively. The first pad 128 may directly contacts with thefirst electrode 120, and the second pad 158 may directly contacts withthe second electrode 150. According to the embodiment, the stackstructure of the first electrode 120/the insulating layer 130/the secondelectrode 150 is formed, so that light emitting efficiency can beimproved. In addition, the stack structure of the second electrode150/the first electrode layer 140 can prevent the second electrode frombeing peeled.

FIGS. 17A to 17F are plan views showing the manufacturing process of alight emitting device according to a sixth embodiment. Hereinafter, thefourth embodiment will be described while focusing on the differencebetween the first embodiment and the sixth embodiment in order to avoidredundancy.

Referring to FIGS. 17A and 17B, the first conductive type semiconductorlayer 113, the active layer, and the second conductive typesemiconductor layer 117 are formed on a substrate. Then, a firstelectrode groove 1313 is formed with a predetermined length D2 such thatthe first conductive type semiconductor layer 113 is exposed.

The first electrode groove 131B may be formed with a predetermined widthW1 toward the center of a chip. The first electrode groove 131B isformed in a line pattern. The width W1 of the first electrode groove1313 is regular or variable, but the embodiment is not limited thereto.

The first electrode 120 is formed along the first electrode groove 131Bof the first conductive type semiconductor layer 113. The firstelectrode 120 is provided inside the first electrode groove 131B.

Referring to FIGS. 17B to 17D, the insulating layer 130 is formed in thefirst electrode groove 131B to insulate the first electrode 120, and theopening 134 is formed at one side of the insulating layer 130. An upperwidth W2 of the insulating layer 130 may be identical to or differentfrom a width (see W1 of FIG. 17A) of the first electrode groove 131A,but the embodiment is not limited thereto.

The second electrode 150 having a line shape is formed on the insulatinglayer 130 and the second conductive type semiconductor layer 117. Aportion of the second electrode 150 is vertically overlapped with thefirst electrode 120 on the insulating layer 130.

Referring to FIGS. 17E to 17F, the first electrode layer 140 is formedon the second electrode 150, the insulating layer 130, and the secondconductive type semiconductor layer 117. The first electrode layer 140may include a transmittive electrode layer or a reflective electrodelayer. A plurality of openings 134 and 148 are formed in the firstelectrode layer 140

The first and second pads 128 and 158 are formed in the openings 134 and148, respectively. The first pad 128 may directly contacts with thefirst electrode 120, and the second pad 158 may directly contacts withthe second electrode 150. According to the embodiment, the firstelectrode 120/the insulating layer 130/a portion of the second electrode150 are vertically overlapped with each other, so that light emittingefficiency can be improved. In addition, the stack structure of thesecond electrode 150/the first electrode layer 140 can prevent thesecond electrode 150 from being peeled.

FIGS. 18A to 18F are plan views showing the manufacturing process of alight emitting device according to a seventh embodiment. Hereinafter,the seventh embodiment will be described while focusing on thedifference between the first embodiment and the seventh embodiment inorder to avoid redundancy.

Referring to FIGS. 18A and 18B, the first conductive type semiconductorlayer 113, the active layer, and the second conductive typesemiconductor layer 117 are formed on the substrate. A mesa etchingprocess is performed in a length (or width) direction of a chip, therebyforming a first electrode groove 131C having a predetermined length suchthat the first conductive type semiconductor layer 113 is exposed. Thefirst electrode groove 131C is formed in a line pattern. The width ofthe first electrode groove 131C is regular or variable, but theembodiment is not limited thereto.

The first electrode 120 is formed along the first electrode groove 131Cof the first conductive type semiconductor layer 113. The firstelectrode 120 is provided inside the first electrode groove 131C.

Referring to FIGS. 18B to 18D, the insulating layer 130 is formed in thefirst electrode groove 131D to insulate the first electrode 120, and theopening 134 is formed at one side of the insulating layer 130.

The second electrode 150 having a line shape is formed at an oppositeside of the second conductive type semiconductor layer 117. The secondelectrode 150 is offset from the first electrode 120 without beingvertically overlapped with the first electrode 120.

Referring to FIGS. 18E to 18F, the first electrode layer 140 is formedon the second electrode 150, the insulating layer 130, and the secondconductive type semiconductor layer 117. The first electrode layer 140may include a transmittive electrode layer or a reflective electrodelayer. A plurality of openings 134 and 148 spaced apart from each otherare formed in the first electrode layer 140

The first and second pads 128 and 158 are formed in the openings 134 and148, respectively. The first pad 128 may directly contacts with thefirst electrode 120, and the second pad 158 may directly contacts withthe second electrode 150. According to the embodiment, the firstelectrode 120 is offset from the second electrode 150, and the stackstructure of the second electrode 150/the first electrode layer 140 canprevent the second electrode 150 from being peeled.

FIGS. 19 to 22 are sectional views schematically showing themanufacturing process of a light emitting device according to an eighthembodiment. Hereinafter, the eighth embodiment will be described whilefocusing on the difference between the first embodiment and the eighthembodiment in order to avoid redundancy.

Referring to FIGS. 19 and 20, after forming the first conductive typesemiconductor layer 113, the active layer 115, and the second conductivetype semiconductor layer 117 on the substrate 111, the first electrodegroove 131 is formed to expose a portion of the first conductive typesemiconductor layer 113. The first electrode 120 is formed inside thefirst electrode groove 131, and the second electrode 152 is formed onthe second conductive type semiconductor layer 117. In other words, thefirst and second electrodes 120 and 152 may be formed through the sameprocess. In this case, a mask layer is formed on the entire regionexcept for regions for the first and second electrodes to prevent ashort phenomenon, but the embodiment is not limited thereto.

Referring to FIGS. 21 and 22, the insulating layer 130 is formed aroundthe first electrode 120, and the opening 131 is exposed. The firstelectrode layer 140 is formed on the second electrode 152, theinsulating layer 130, and the second conductive type semiconductor layer117.

FIGS. 23 to 26 are sectional views schematically showing themanufacturing process of a light emitting device according to a ninthembodiment. Hereinafter, the ninth embodiment will be described whilefocusing on the difference between the first embodiment and the ninthembodiment in order to avoid redundancy.

Referring to FIGS. 23 and 24, an insulating layer 132 is formed on alower layer 113A of the first conductive type semiconductor layer 113 onthe substrate 111. The insulating layer 132 has a shape corresponding toa first electrode pattern, and has a width greater than a line with ofthe first electrode pattern.

Thereafter, an upper layer 113B, the active layer 115, and the secondconductive type semiconductor layer 117 are formed on the lower layer113A of the first conductive type semiconductor layer 113. The lowerlayer 113A and the upper layer 113B include III-V group compoundsemiconductors and include a first conductive dopant.

Referring to FIGS. 24 and 25, the first electrode groove 132A is formedby etching an inner part (i.e., first electrode region) of theinsulating layer 132 with a depth to expose the lower layer 113A of thefirst conductive type semiconductor layer 113. The first electrode 120is formed in the first electrode groove 132A with a predetermined depth,and the insulating layer 132 is provided at the outer side surface ofthe first electrode 120. The first electrode 120 can be embedded in thefirst electrode groove 132A.

Referring to FIGS. 25 and 26, the insulating layer 135A is formed on thetop surface of the first electrode 120. The insulating layer 135A may beformed in a remaining region except for the opening 134. The first padmay be formed in the opening 134. Since process of forming the secondelectrode/the first electrode layer/the second pad has been described inthe first embodiment, the details thereof will be omitted.

FIGS. 27 to 30 are sectional views schematically showing a process offorming the first electrode according to a tenth embodiment.Hereinafter, the tenth embodiment will be described while focusing onthe difference between the first embodiment and the tenth embodiment inorder to avoid redundancy.

Referring to FIGS. 27 and 28, the first conductive type semiconductorlayer 113, the active layer 115, and the second conductive typesemiconductor layer 117 are formed on the substrate 111, and the firstelectrode groove 131D is formed through a mesa etching process. In thiscase, the first electrode groove 131D may be formed deeper than that ofthe first embodiment.

Referring to FIGS. 29 and 30, the first electrode 120 is formed in theopening 134, and a top surface of the first electrode 120 may be lowerthan a lower surface of the active layer 115. Accordingly, theelectrical contact between the first electrode 120 and the active layer115 can be prevented.

After the first electrode 120 has been formed, the semiconductor layers113, 115, and 117 surrounding the first electrode 120 are etched, andthe insulating layer 133 is formed in the etched region. The opening 134may be formed in the insulating layer 133.

The first pad may be formed in the opening 134. Since the process offorming the second electrode/the first electrode layer/the second padhas been described in the first embodiment, the details thereof will beomitted.

FIGS. 31 to 34 are views showing examples of patterns of the first andsecond electrodes.

Referring to FIG. 31, an electrode pattern 182 having a plurality of armshapes may be formed on a semiconductor layer 180. The semiconductorlayer may be the first conductive type semiconductor layer, the secondconductive type semiconductor layer, or the insulating layer. Theelectrode pattern 182 may be bent at least one time.

Referring to FIG. 32, an electrode 183 and an electrode pattern having astar-shape structure are formed on the semiconductor layer 180.

Referring to FIG. 33, an electrode 186A is arranged in a line shape, andmay include a plurality of arm shapes 186B branching from the center ofthe line.

Referring to FIG. 34, an electrode 189A has a polygonal shape and mayinclude branch structures 189B extending inside the electrode 189A.

As shown in FIGS. 31 to 34, the freedom degree of the first and secondelectrodes can be improved, and a pad may be formed at a portion of eachpattern.

According to the embodiments, a light emitting area can be improved, andcurrent can be diffused, so that light emitting efficiency can beimproved. In addition, a device having strong ESD (Electro StaticDischarge) resistance can be manufactured due to the current diffusion.According to the embodiment, the sequence of processes for theinsulating layer and the first electrode, the depth of mesa-etching, andelectrode patterns can be variously changed in the technical scope ofthe embodiments. The patterns of the first and second electrodes may bepartially overlapped with each other in at least one region.

According to the embodiment, the second electrode can be prevented frombeing peeled by using the structure of the second electrode/the firstelectrode and the dual electrode structure.

FIG. 35 is a side sectional view showing a light emitting device package30 based on FIG. 1. Hereinafter, details thereof will be made based onthe structure of the light emitting device.

Referring to FIG. 35, the light emitting device package 30 includes abody 31, first and second lead electrodes 32 and 33 disposed on the body31, the light emitting device 100 according to the embodiment installedin the body 31 and electrically connected with the first and second leadelectrodes 32 and 33, and a molding member 37 surrounding the lightemitting device 100.

The body 31 may include a silicon, synthetic resin like as PPA, ormetallic material. An inclined surface may be formed around the lightemitting device 100. The body 31 may have a cavity structure, an upperportion of which is open. The light emitting device 100 can be providedin the cavity.

The first and second lead electrodes 32 and 33 are insulated from eachother, and supply power to the light emitting device 100. The first andsecond lead electrodes 32 and 33 reflect light emitted from the lightemitting device 100 such that light efficiency can be increased. Thefirst and second lead electrodes 32 and 33 can discharge heat from thelight emitting device 100 to the outside.

The light emitting device 100 maybe installed on the body 31, or on thefirst lead electrode 32 or the second lead electrode 33.

The light emitting device 100 may be electrically connected with thefirst and second lead electrodes 32 and 33 through a wire 36. Accordingto the embodiment, instead of the light emitting device 100, the lightemitting devices according to other embodiments disclosed above can beemployed. The light emitting devices can be mounted through at least oneof wires, die-bonding or flip-bonding, but the embodiment is not limitedthereto.

The molding member 37 can protect the light emitting device 100 bysurrounding the light emitting device 100. The molding member 37includes a phosphor to change the wavelength of light emitted from thelight emitting device 100. A lens may be formed on the molding member37.

The light emitting device 100 according to the embodiment (embodiments)is packaged on a semiconductor substrate including resin or silicon, aninsulating substrate, or a ceramic substrate, so that the semiconductorlight emitting device 100 serves as a light source for an indicationdevice, an illumination device, a display device, and the like. Eachembodiment can be selectively adapted to another embodiment.

The light emitting device or the light emitting device package accordingto the embodiment can be adapted to an illumination system. Theillumination system includes an illumination unit shown in FIG. 36, anda backlight unit shown in FIG. 37. The illumination system may beincluded in a traffic light, a head lamp, or a signboard lamp.

FIG. 36 is a perspective view showing an illumination unit according tothe embodiment.

Referring to FIG. 36, the illumination unit 1100 includes a case body1110, a light emitting module 1130 installed in the case body 1110, anda connector 1120 installed in the case body 1110 to receive power froman external power supply.

Preferably, the case body 1110 may include a material having a superiorheat sink characteristic, and may include a metallic material or a resinmaterial.

The light emitting module 1130 may include a board 1132 and at least onelight emitting device package 1210 mounted on the board 1132. The lightemitting device package 1210 may include a light emitting deviceaccording to the embodiment.

The board 1132 may be formed by printing a circuit pattern on aninsulator. For example, the board 1132 may include a printed circuitboard (PCB), a metal core PCB, a flexible PCB, or a ceramic PCB.

The board 1132 may include a material to effectively reflect light. Thesurface of the board 1132 may have a color, such as white or silver, toeffectively reflect light.

At least one light emitting device package 1210 may be mounted on theboard 1132. The light emitting device package 1210 may include at leastone light emitting device. The LED 100 may include a light emittingdiode of the visible ray band to emit red, green, blue, or white lightor an UV light emitting diode to emit ultraviolet ray.

The light emitting module 1130 may have the combination of various lightemitting device packages 1210 in order to obtain desirable color andbrightness. For example, the light emitting module 1130 may have thecombination of white, red, and green light emitting diodes in order toensure a high color rendering index (CRI).

The connector 1120 is electrically connected with the light emittingmodule 1130 to supply power to the light emitting module 1130. Theconnector 1120 is coupled with an external power supply through a socketscheme, but the embodiment is not limited thereto. For example, theconnector 1120 has the form of a pin so that the connector 1120 isinserted into the external power supply or connected with the externalpower supply by using a wire.

FIG. 37 is an exploded perspective view showing a backlight unit 1200according to the embodiment.

Referring to FIG. 37, the backlight unit 1200 includes a light guideplate 1210, a light emitting module 1240 to supply light to the lightguide plate 1210, a reflective member 1220 provided under the lightguide plate 1210, and a bottom cover 1230 to receive the light guideplate 1210, the light emitting module 1240, and the reflective member1220.

The light guide plate 1210 diffuses light to serve as a surface lightsource. The light guide plate 1210 includes a transparent material. Forexample, the light guide plate 1210 includes one of acrylic resin-basedmaterial such as polymethyl methacrylate (PMMA), polyethyleneterephthalate (PET), poly carbonate (PC), cycloolefin copolymer (COC),and polyethylene naphthalate (PEN).

The light emitting module 1240 supplies light to at least one side ofthe light guide plate 1210, and serves as a light source of a displayapparatus having the backlight unit.

The light emitting module 1240 may make contact with the light guideplate 1210, but the embodiment is not limited thereto. In detail, thelight emitting module 1240 includes a board 1242 and a plurality oflight emitting packages 200 mounted on the board 1242, and the board1242 may make contact with the light guide plate 1210, but theembodiment is not limited thereto.

The board 1242 may be a printed circuit board (PCB) including a circuitpattern (not shown). The board 1242 may include a metal core PCB and aflexible PCB as well as a typical PCB, but the embodiment is not limitedthereto.

The light emitting device packages 200 may be mounted on the board 1242such that a light emission surface of each light emitting device package200 is spaced apart from the light guide plate 1210 with a predetermineddistance.

The reflective member 1220 may be formed below the light guide plate1210. The reflective member 1220 upwardly reflects light which has beenincident downward from the light guide plate 1210, thereby improving thebrightness of a backlight unit. The reflective member 1220 may includePET, PC, or PVC resin, but the embodiment is not limited thereto.

The bottom cover 1230 may receive the light guide plate 1210, the lightemitting module 1240, and the reflective member 1220. To this end, thebottom cover 1230 has the shape of a box, a top surface of which isopen, but the embodiment is not limited thereto.

The bottom cover 1230 may include a metallic material or a resinmaterial, and may be manufactured through press molding or extrusionmolding.

The method of manufacturing the light emitting device according to theembodiment includes forming the first conductive type semiconductorlayer, forming the active layer on the first conductive typesemiconductor layer, forming the second conductive type semiconductorlayer on the active layer, forming the first electrode on the firstconductive type semiconductor layer through mesa-etching, forming theinsulating layer on the first electrode, forming the second electrode onat least one layer of the insulating layer and the second conductivetype semiconductor layer, and forming the first electrode layer on thesecond electrode and the second conductive type semiconductor layer.

According to the embodiment, a light emitting area can be more improvedas compared with a light emitting device of the same chip size, and thepattern arrangement of the first and second electrodes can be freelyperformed. In addition, current is diffused on the active layer, so thatlight emitting efficiency can be improved. The first electrode layer isprovided on the second electrode having an arm shape or a branchstructure, so that the area of the first electrode layer can beincreased, thereby improving current diffusion. The first electrodelayer is provided on the second electrode, so that the second electrodecan be prevented from being peeled.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A light emitting device comprising: a light emitting structureincluding a first conductive type semiconductor layer, an active layeron the first conductive type semiconductor layer, and a secondconductive type semiconductor layer on the active layer; a firstelectrode including at least one arm shape and contacted with a portionof the first conductive type semiconductor layer; an insulating layercovering the first electrode; and a second electrode including at leastone arm shape, wherein the second electrode disposes on at least one ofthe insulating layer and the second conductive type semiconductor layer.2. The light emitting device of claim 1, further comprising a firstelectrode layer on the second electrode.
 3. The light emitting device ofclaim 2, wherein the first electrode layer is formed on the insulatinglayer and the second conductive type semiconductor layer.
 4. The lightemitting device of claim 1, wherein a portion of the second electrode isoverlapped with the first electrode disposed under the insulating layer.5. The light emitting device of claim 1, further comprising at least onesecond pad connected to the second electrode and disposed on the secondconductive type semiconductor layer.
 6. The light emitting device ofclaim 2, wherein a portion of the first electrode layer is interposedbetween the second electrode and the second pad.
 7. The light emittingdevice of claim 6, wherein the second pad directly contacts with thesecond electrode, the first electrode layer, and the second conductivetype semiconductor layer.
 8. The light emitting device of claim 2,wherein the insulating layer includes an opening to expose a portion ofthe first electrode.
 9. The light emitting device of claim 8, furthercomprising a first pad on the first electrode exposed in the opening.10. The light emitting device of claim 8, wherein the opening is formedin the insulating layer and the first electrode layer.
 11. The lightemitting device of claim 2, further comprising a second electrode layerbetween the second electrode and the second conductive typesemiconductor layer.
 12. The light emitting device of claim 2, whereinthe first electrode layer includes a transmittive electrode layer and/ora reflective electrode layer.
 13. The light emitting device of claim 10,wherein the first electrode layer and the second electrode layer includea transmittive electrode layer.
 14. The light emitting device of claim1, wherein the second electrode is offset from the first electrode onthe second conductive type semiconductor layer.
 15. The light emittingdevice of claim 1, wherein at least one of the first and secondelectrodes includes at least one of a straight-line pattern, a curvedpattern, a mixture pattern of the straight-line pattern and the curvedpattern, plural patterns branching from one pattern, a polygonal shapepattern, a lattice shape pattern, a dot shape pattern, a diamond shapepattern, a parallelogram shape pattern, a mesh shape pattern, a stripeshape pattern, a cross shape pattern, a star-shape pattern, a circularshape pattern, and a mixture pattern thereof.
 16. The light emittingdevice of claim 2, further comprising a semiconductor layer interposedbetween the second conductive type semiconductor layer and the electrodelayer and having a polarity opposite to a polarity of a secondconductive type.
 17. The light emitting device of claim 1, furthercomprising at least one of an undoped semiconductor layer, a bufferlayer, and a substrate below the first conductive type semiconductorlayer.
 18. The light emitting device of claim 1, wherein the first andsecond electrodes are vertically overlapped with each other by at least60%.
 19. A light emitting device comprising: a light emitting structureincluding a first conductive type semiconductor layer, an active layeron the first conductive type semiconductor layer, and a secondconductive type semiconductor layer on the active layer; a firstelectrode including at least one arm shape embedded in the lightemitting structure and contacted with a portion of the first conductivetype semiconductor layer; an insulating layer covering the firstelectrode; a second electrode including at least one arm shape anddisposed on at least one of the insulating layer and the secondconductive type semiconductor layer; and a first transmittive electrodelayer on the second electrode and the insulating layer.
 20. The lightemitting device of claim 19, further comprising a second transmittiveelectrode layer interposed between the second electrode and the secondconductive type semiconductor layer and vertically overlapped with thefirst transmittive electrode layer.
 21. The light emitting device ofclaim 19, further comprising an opening formed in the insulating layerand the first transmittive electrode and exposing the first electrode.22. The light emitting device of claim 20, wherein the firsttransmittive electrode layer is formed more widely than an area of thesecond transmittive electrode layer.
 23. The light emitting device ofclaim 20, wherein the second electrode is vertically overlapped with thefirst electrode on the first transmittive electrode layer.
 24. The lightemitting device of claim 23, wherein the first transmittive electrode isvertically overlapped with the insulating layer on the second electrode.25. The light emitting device of claim 23, wherein the firsttransmittive electrode layer is vertically overlapped with the firstelectrode on the insulating layer.
 26. The light emitting device ofclaim 19, wherein at least one of the first and second electrodesincludes at least one a straight-line pattern, a curved pattern, amixture pattern of the straight-line pattern and the curved pattern,plural patterns branching from one pattern, a polygonal shape pattern, alattice shape pattern, a dot shape pattern, a diamond shape pattern, aparallelogram shape pattern, a mesh shape pattern, a stripe shapepattern, a cross shape pattern, a star-shape pattern, a circular shapepattern, and a mixture pattern thereof.
 27. A light emitting devicepackage comprising: a body; a plurality of lead electrodes on the body;a light emitting device electrically connected to the lead electrodes;and a molding member covering the light emitting device, wherein thelight emitting device includes a light emitting structure, whichincludes a first conductive type semiconductor layer, an active layer onthe first conductive type semiconductor layer, and a second conductivetype semiconductor layer on the active layer, a first electrodeincluding at least one arm shape and contacted with a portion of thefirst conductive type semiconductor layer; an insulating layer coveringthe first electrode; and a second electrode including at least one armshape, wherein the second electrode disposes on at least one of theinsulating layer and the second conductive type semiconductor layer.